The method for calculation of carrier concentration in narrow-gap n-type doped Hg1-xCdxTe structures

被引：2

作者：

Jozwikowska, Alina ^{[1
]}

Jozwikowski, Krzysztof ^{[2
]}

Suligowski, Mariusz ^{[2
]}

Moszczynski, Pawel ^{[3
]}

Nietopiel, Michal ^{[2
]}

机构：

[1] Warsaw Univ Life Sci SGGW, Fac Appl Informat & Math, Ul Nowoursynowska, Warsaw, Poland

[2] Mil Univ Technol, Inst Tech Phys, Ul Kaliskiego 2, PL-00908 Warsaw, Poland

[3] Mil Univ Technol, Fac Cybernet, Ul Kaliskiego 2, PL-00908 Warsaw, Poland

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2017年 / 49卷 / 03期

关键词：

Donor bands; Electron concentration; HgCdTe n-type structures; CONDUCTION;

D O I：

10.1007/s11082-017-0941-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple method for the computation of carrier concentration in n-type doped Hg1-xCdxTe (MCT) structures is proposed. The method is based on the postulate of the existence of donor bands. In our model the donor bands are postulated to have a Gaussian distribution of density of states characterized by two parameters only (mean energy for this distribution and standard deviation). These parameters could be obtained with experimental data, which were comprised of a wide range of doping levels for various kinds of dopants.

引用

页数：8

共 20 条

[1]

[Anonymous], 2016, EXPT DATA OBTAINED M

[2] APPROXIMATIONS FOR CARRIER DENSITY IN NONPARABOLIC SEMICONDUCTORS [J].

ARIELALTSCHUL, V ;

FINKMAN, E ;

BAHIR, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1312-1316

[3]

Bebb H.B., 1961, J APPL PHYS, V32, P2265

[4]

Capper P., 1994, PROPERTIES NARROW GA, P80

[5]

Capper P., 2011, MERCURY CADMIUM TELL, P322

[6] Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail [J].

Chang, Yong ;

Grein, Christoph H. ;

Sivananthan, Sivalingam ;

Flatte, M. E. ;

Nathan, V. ;

Guha, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[7] THE ACTIVATION-ENERGY OF COPPER SHALLOW ACCEPTORS IN MERCURY CADMIUM TELLURIDE [J].

CHEN, MC ;

TREGILGAS, JH .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :787-789

[8] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].

CONWELL, EM .

PHYSICAL REVIEW, 1956, 103 (01) :51-60

[9] BAND TAILS IN SEMICONDUCTORS [J].

KANE, EO .

SOLID-STATE ELECTRONICS, 1985, 28 (1-2) :3-10

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

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