Photoluminescence and the exciton-phonon coupling in hydrothermally grown ZnO

被引:33
作者
Mendelsberg, R. J. [1 ]
Allen, M. W. [2 ]
Durbin, S. M. [2 ]
Reeves, R. J. [1 ]
机构
[1] Univ Canterbury, Dept Phys & Astron, Christchurch 1, New Zealand
[2] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 1, New Zealand
关键词
BOUND-EXCITON; TEMPERATURE-DEPENDENCE; BAND-GAP; POLARITON; EMISSION; ENERGY; STATES;
D O I
10.1103/PhysRevB.83.205202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Near band-edge photoluminescence (PL) from hydrothermally grown bulk ZnO was studied as a function of temperature along with the effects of simultaneous excitation with below-gap photons, allowing for accurate assignment of the emission features not possible from low-temperature data alone. Free exciton emission was clearly observed at low temperatures and dominated the PL spectrum above 100 K. Emission from A excitons bound to three neutral donors dominated the low-temperature PL spectrum. Recombination of B excitons bound to these same neutral donors were also identified along with A excitons bound to the donors in their ionized state. A clear difference in the redshift of free and bound excitons with increasing temperature was observed and attributed to reduced exciton-phonon coupling for the bound excitons. Additionally, Fano resonance of the 1-LO replica of the dominant bound A exciton was observed to reduce its PL intensity which can lead to the misidentification of the 2-LO replica as a donor-acceptor-pair transition.
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页数:8
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