65-nm CMOS, W-band receivers for imaging applications

被引:19
作者
Tang, K. W. [1 ]
Khanpour, M. [1 ]
Garcia, P. [2 ]
Garnier, C. [2 ]
Voinigescu, S. P. [1 ]
机构
[1] Univ Toronto, ECE Dept, Toronto, ON, Canada
[2] STMicroelect, Crolles, France
来源
PROCEEDINGS OF THE IEEE 2007 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2007年
关键词
D O I
10.1109/CICC.2007.4405838
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two 76-92 GHz receivers, featuring 3-stage cascode LNAs coupled through a transformer to a double-balanced Gilbert-cell mixer and differential DC-5GHz IF buffer, are reported in 65-nm general purpose (GP) CMOS technology. One receiver features a traditional LNA with series-series inductive feedback while the LNA of the second receiver employs a shunt-series, transformer-feedback cascode stage. Both receivers have a differential down-conversion gain of 12 dB, an input P-1dB of -13 dBm, and a double-sideband noise figure of 9-10 dB. They each occupy an area of 550 mu mx550 mu m and consume 94 mW. An LO-to-RF isolation of 60 to 59 dB was measured for LO signals in the 80-85 GHz range. The transformer-feedback provides a broader bandwidth input match, lower than -10 dB from 74 to 95 GHz.
引用
收藏
页码:749 / +
页数:2
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