Emission spectrum control in monolithic blue-cyan dichromatic light-emitting diodes

被引:2
作者
Arteev, D. S. [1 ]
Karpov, S. Y. [2 ]
Sakharov, A., V [1 ]
Nikolaev, A. E. [1 ]
Usov, S. O. [1 ,3 ]
Lundin, W., V [1 ]
Tsatsulnikov, A. F. [1 ,3 ]
机构
[1] Ioffe Inst, 26 Politekhnicheskaya Str, St Petersburg 194021, Russia
[2] STR Grp Soft Impact Ltd, 64 Bolshoi Sampsonievskii Ave,Bldg E, St Petersburg 194044, Russia
[3] RAS, Submicron Heterostruct Microelect Res & Engn Ctr, 26 Politekhnicheskaya Str, St Petersburg 194021, Russia
关键词
doping; emission spectrum; light-emitting diode; InGaN; simulation; quantum well; GAN; ELECTROLUMINESCENCE; TRANSPORT; LEDS;
D O I
10.1088/1361-6641/ab74ef
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
InGaN-based dichromatic light emitting diodes (LEDs) emitting in the blue and cyan spectral ranges simultaneously, are investigated both experimentally and theoretically. Two main approaches to controlling the ratio of blue-to-cyan components in the emission spectrum are suggested and analyzed: (i) thickness variation of the GaN barrier between the blue and cyan quantum wells and (ii) optimization of the barrier doping with n- or p-type impurities. Detailed examination of the approaches is carried out in order to understand their capabilities for intentional variation of the blue-to-cyan ratio in a wide range. Based on numerical simulations, a novel mechanism, invoking enhanced Shockley-Read-Hall recombination in the barrier and underlying both approaches, is suggested and discussed. It is shown that proposed design of the monolithic blue-cyan LEDs does not result in substantial decrease of the LED emission efficiency compared to monochromatic blue or cyan reference samples.
引用
收藏
页数:7
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