An Adaptive Grid Scheme for Single-Event Upset Device Simulations

被引：1

作者：

Cummings, Daniel J. ^{[1
]}

Park, Hyunwoo ^{[1
]}

Thompson, Scott E. ^{[1
]}

Law, Mark E. ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Adaptive grid; charge collection; device simulation; single-event upset; MICROELECTRONICS; MECHANISMS; EQUATIONS;

D O I：

10.1109/TNS.2010.2080688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An adaptive grid scheme for single-event upset device simulations is presented. Single-event transient simulations for a reverse-biased N + /P diode and nMOSFET were performed using the adaptive grid scheme, a customized grid scheme and a uniform grid scheme. Results show that adaptive gridding can offer significant simulation time savings while preserving accuracy.

引用

页码：3239 / 3244

页数：6

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