Effects of the single and double (overlap) scanned excimer laser annealing on solid phase crystallized silicon films

被引：3

作者：

Kim, Moojin ^{[1
]}

Jin, Guanghai ^{[1
]}

Kim, Kyoung-Bo ^{[1
]}

Song, Jonghyun ^{[2
]}

机构：

[1] Samsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South Korea

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

来源：

DISPLAYS | 2015年 / 36卷

关键词：

AMOLED; Thin film transistors; Excimer laser annealing; Solid phase crystallization; SI; DEFECTS; TFT;

D O I：

10.1016/j.displa.2014.11.001

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Thin amorphous silicon (a-Si) films were crystallized into polycrystalline silicon (poly-Si) by combining solid phase crystallization (SPC) and subsequent excimer laser annealing (ELA). Then thin film transistors (TFTs) were fabricated by using the poly-Si formed in the single and double excimer laser scanned area. The device performance of the TFTs fabricated with the excimer laser energy density of 230 mJ/cm(2) is almost equal for the single and double scanned area. This observation indicates that the overlapping laser irradiation with the laser energy density below 230 mJ/cm2 does not change the characteristics of TFTs. Based on this result, we discuss the correlation between performance of active matrix organic light emitting display (AMOLED) panels and excimer laser energy density during ELA for SPC treated and non-treated poly-Si films. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：9 / 12

页数：4

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