Many-body effects on modulation-doped InAs/GaAs quantum dots

被引：33

作者：

Lee, JI

Lee, HG

Shin, EJ

Yu, S

Kim, D

Ihm, G

机构：

[1] CHUNGBUK NATL UNIV,SCH ELECT & ELECT ENGN,CHEONGJU 360736,SOUTH KOREA

[2] CHUNGNAM NATL UNIV,DEPT PHYS,TAEJON 305764,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots. (C) 1997 American Institute of Physics.

引用

页码：2885 / 2887

页数：3

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