K-band 3-D MMIC low noise amplifier and mixer using TFMS lines with ground slit

被引:16
|
作者
Tokumitsu, T [1 ]
Piernas, B
Oya, A
Sakai, K
Hasegawa, Y
机构
[1] Eudyna Devices Inc, Tokyo 1920046, Japan
[2] Eudyna Devices USA Inc, San Jose, CA 95131 USA
关键词
broadside coupler; I-Q mixer; low-noise amplifier (LNA); thin-film micro-strip (TFMS) line with slit; three-dimensional (3-D) microwave monolithic integrated circuit (MMIC);
D O I
10.1109/LMWC.2005.847668
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three-dimensional (3-D) microwave monolithic integrated circuit (MMIC) technology, that incorporates slits in the ground metal, was applied to K-band low noise amplifier (LNA) and I/Q mixer to provide a low cost solution for various K-band receivers such as for P-to-P radio, WLAN, and UWB sensors. The LNA incorporates a quasicoplanar stub in the input-matching network, improving the noise figure by I dB. This low-noise amplifier (LNA) exhibits a noise figure of 2.5 dB with an associated gain of 16 dB and an area of 0.75 x 0.65 mm(2). The I/Q resistive mixer incorporates a broadside 3-dB coupler with a 22-μ m-wide slit in the ground metal beneath the coupled thin-film micro-strip (TFMS) lines (patent pending). The insertion loss of the 3 dB coupler is 0.75 dB. The I/Q mixer exhibits a conversion loss of less than 14 dB at 0.1-2.0 GHz IF frequencies for 2-dBm local input power. These LNA and mixer potentially make it easier to integrate receiver functions in a die.
引用
收藏
页码:318 / 320
页数:3
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