A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf Capacitor

被引：9

作者：

Cheng, C. H. ^{[1
,2
]}

Huang, C. C. ^{[4
]}

Hsu, H. H. ^{[5
]}

Chen, P. C. ^{[3
]}

Chiang, K. C. ^{[4
]}

Chin, Albert ^{[4
]}

Yeh, F. S. ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 12期

关键词：

MIM CAPACITORS; RELIABILITY; THIN;

D O I：

10.1149/1.3491490

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO3/TaN and TaN/SrTiO3/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.

引用

页码：H436 / H439

页数：4

共 21 条

[1] Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode [J].

Cheng, C. H. ;

Pan, H. C. ;

Yang, H. J. ;

Hsiao, C. N. ;

Chou, C. P. ;

McAlister, S. P. ;

Chin, Albert .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1095-1097

[2] Nonlinear finite element analysis of the plantar fascia due to the windlass mechanism [J].

Cheng, Hsin-Yi Kathy ;

Lin, Chun-Li ;

Chou, Shih-Wei ;

Wang, Hsien-Wen .

FOOT & ANKLE INTERNATIONAL, 2008, 29 (08) :845-851

[3] Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors [J].

Chiang, K. C. ;

Cheng, C. H. ;

Jhou, K. Y. ;

Pan, H. C. ;

Hsiao, C. N. ;

Chou, C. P. ;

McAlister, S. P. ;

Chin, Albert ;

Hwang, H. L. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :694-696

[4] High-performance SrTiO3 MIM capacitors for analog applications [J].

Chiang, K. C. ;

Huang, Ching-Chien ;

Chen, G. L. ;

Chen, Wen Jauh ;

Kao, H. L. ;

Wu, Yung-Hsien ;

Chin, Albert ;

McAlister, Sean P. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2312-2319

[5]

CHIANG KC, 2006, S VLSI TECHN, P126

[6] RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications [J].

Ding, SJ ;

Hu, H ;

Zhu, CX ;

Kim, SJ ;

Yu, XF ;

Li, MF ;

Cho, BJ ;

Chan, DSH ;

Yu, MB ;

Rustagi, SC ;

Chin, A ;

Kwong, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :886-894

[7] Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors [J].

El Kamel, F. ;

Gonon, P. ;

Vallée, C. .

APPLIED PHYSICS LETTERS, 2007, 91 (17)

[8] Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors [J].

Gonon, P. ;

Vallee, C. .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[9]

HU H, 2003, IEDM, P379

[10] RFIC TaN/SrTio3/TaN MIM capacitors with 35 fF/μm2 capacitance density [J].

Huang, C. C. ;

Chiang, K. C. ;

Kao, H. L. ;

Chin, Albert ;

Chen, W. J. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (09) :493-495

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