Improved CIGS thin-film solar cells by surface sulfurization using In2S3 and sulfur vapor

被引：46

作者：

Ohashi, D ^{[1
]}

Nakada, T ^{[1
]}

Kunioka, A ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 1578572, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

sulfurization; CIGS; thin-film solar cells; In2S3; Cu(In; Ga)(S; Se)(2);

D O I：

10.1016/S0927-0248(00)00290-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Surface sulfurization of Cu(In,Ca)Se-2 (CIGS) thin films was carried out using two alternative techniques that do not utilize toxic H2S gas; a sequential evaporation of In2S3 after CIGS deposition and the annealing of CIGS thin films in sulfur vapor. A Cu(In,Ga)(S,Se)(2) thin layer was grown on the surface of the CIGS thin film after sulfurization using In,S,, whereas this layer was not observed for CIGS thin films after sulfurization using sulfur vapor, although a trace quantity of S was confirmed by AES analysis. In spite of the difference in the surface modification techniques, the cell performance and process yield of the ZnO:Al/CdS/ CIGS/Mo/glass thin-film solar cells were remarkably improved by using both surface sulfurization techniques. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：261 / 265

页数：5