Pulsed laser ablation of aluminum in the presence of nitrogen: Formation of aluminum nitride

被引：42

作者：

Sharma, AK ^{[1
]}

Thareja, RK

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

[2] Indian Inst Technol, Ctr Laser Technol, Kanpur 208016, Uttar Pradesh, India

[3] Kumamoto Univ, Dept Elect & Comp Engn, Kumamoto 8608555, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 12期

关键词：

D O I：

10.1063/1.1329353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the pulsed laser ablation of aluminum in the presence of nitrogen gas using a 1.06 mum wavelength of Nd:YAG laser. A prominent band of aluminum nitride corresponding to the (0-0) band of the system belonging to a (3)pi-(3)pi transition was observed at 507.8 nm. An attempt is made to identify the ionized states of aluminum and nitrogen contributing to formation of the AlN band. AlN films were deposited at room temperature and characterized using x-ray diffraction. A direct correlation between the laser ablated aluminum plasma and the deposited AlN film is reported. (C) 2000 American Institute of Physics. [S0021- 8979(00)10901-1].

引用

页码：7334 / 7338

页数：5

共 30 条

[1]

ABHILASHA PSR, 1993, PHYS REV E, V48, P2929

[2] Absorption and saturation mechanisms in aluminium laser ablated plasmas [J].

Amoruso, S ;

Armenante, M ;

Berardi, V ;

Bruzzese, R ;

Spinelli, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 65 (03) :265-271

[3] SPECTROSCOPIC INVESTIGATION OF LASER-INITIATED LOW-PRESSURE PLASMAS IN ATMOSPHERIC GASES [J].

ARMSTRONG, RA ;

LUCHT, RA ;

RAWLINS, WT .

APPLIED OPTICS, 1983, 22 (10) :1573-1577

[4] On the initial stages of AlN thin-film growth onto, 0001 oriented Al2O3 substrates by molecular beam epitaxy [J].

Heffelfinger, JR ;

Medlin, DL ;

McCarty, KF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :466-472

[5] Analyses of gas-phase reactions during reactive laser ablation using emission spectroscopy [J].

Hermann, J ;

Dutouquet, C .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (21) :2707-2713

[6] A low energy method for the deposition of boron nitride thin films [J].

Hobbs, KR ;

Coombe, RD .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4586-4590

[7] Numerical modeling of pulsed laser evaporation of aluminum targets [J].

Jeong, SH ;

Greif, R ;

Russo, RE .

APPLIED SURFACE SCIENCE, 1998, 127 :177-183

[8] THE UV-VISIBLE SPECTROSCOPY OF LASER-PRODUCED ALUMINUM PLASMAS [J].

KNUDTSON, JT ;

GREEN, WB ;

SUTTON, DG .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4771-4780

[9] LASER ABLATION DEPOSITION OF TIN FILMS [J].

KOOLS, JCS ;

NILLESEN, CJCM ;

BRONGERSMA, SH ;

VANDERIET, E ;

DIELEMAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1809-1814

[10]

LOCHTEHLTGREVEN W, 1968, PLASMA DIAGNOSTICS

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