Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

被引：59

作者：

Xu, Kai ^{[1
]}

Huang, Yun ^{[1
]}

Chen, Bo ^{[2
]}

Xia, Yang ^{[2
]}

Lei, Wen ^{[3
]}

Wang, Zhenxing ^{[1
]}

Wang, Qisheng ^{[1
]}

Wang, Feng ^{[1
]}

Yin, Lei ^{[1
]}

He, Jun ^{[1
]}

机构：

[1] Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[3] Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia

来源：

SMALL | 2016年 / 12卷 / 23期

基金：

中国国家自然科学基金;

关键词：

MOS2; TRANSISTORS; MULTILAYER MOS2; GRAPHENE; DIELECTRICS; CONTACTS; MOBILITY; GROWTH;

D O I：

10.1002/smll.201600521

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.

引用

页码：3106 / 3111

页数：6

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