共 18 条
[1]
Polysilicon gate etching in high density plasmas .4. Comparison of photoresist and oxide masked polysilicon etching-thickness determination of gate oxide layers using x-ray photoelectron spectroscopy
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (06)
:3473-3482
[2]
REACTIVE ION ETCHING OF SILICON USING BROMINE CONTAINING PLASMAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:1696-1701
[4]
IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2/O2 MIXTURES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1994, 12 (05)
:2630-2640
[5]
COMPETITIVE HALOGENATION OF SILICON SURFACES IN HBR/CL-2 PLASMAS STUDIED RAY PHOTOELECTRON-SPECTROSCOPY AND IN-SITU, REAL-TIME, PULSED LASER-INDUCED THERMAL-DESORPTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1995, 13 (04)
:1970-1976
[6]
DONNELLY VM, 1996, P NATL ADV STUD I E, V336, P243
[8]
QUANTITATIVE CHEMICAL TOPOGRAPHY OF POLYCRYSTALLINE SI ANISOTROPICALLY ETCHED IN CL-2/O-2 HIGH-DENSITY PLASMAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (02)
:214-226
[10]
CHEMICAL-STATES OF BROMINE ATOMS ON SIO2 SURFACE AFTER HBR REACTIVE ION ETCHING - ANALYSIS OF THIN OXIDE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1993, 32 (6B)
:3063-3067