Effect of Pregate Carbon Implant on Narrow Width Behavior and Performance of High-k Metal-Gate nMOS Transistors

被引：1

作者：

Mohapatra, Nihar R. ^{[1
]}

Ganeriwala, Mohit D. ^{[1
]}

Sivanaresh, Satya M. ^{[1
]}

机构：

[1] IIT Gandhinagar, Dept Elect Engn, Gandhinagar 382355, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 07期

关键词：

Boron diffusion; device scaling; high-k metal gate (HKMG); junction leakage; metal gate; MOS transistor; narrow width effect (NEW); self-interstitials; universal curve; SILICON;

D O I：

10.1109/TED.2016.2570600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper experimentally shows the reduction of anomalous narrow width effect (NWE) observed in gate-first high-k metal-gate (HKMG) nMOS transistors by using pregate carbon implants. The experiments are performed with different carbon implant doses and energies, in collaboration with a semiconductor foundry. The 28-nm gate-first HKMG CMOS technology is used as the baseline flow. The physical mechanisms responsible for this improvement are identified and explained in detail. It is further shown that the pregate carbon implant used to suppress the NWE also increases junction leakage, improves the device electrostatics, and improves the universal curve.

引用

页码：2708 / 2713

页数：6

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