Production and photovoltaic characterisation of n-Si/p-CZTS heterojunction solar cells based on a CZTS ultrathin active layers

被引：22

作者：

Gezgin, Serap Yigit ^{[1
]}

Houimi, Amina ^{[1
]}

Kilic, Hamdi Sukur ^{[2
,3
]}

机构：

[1] Selcuk Univ, Fac Sci, Dept Phys, TR-42031 Selcuklu, Konya, Turkey

[2] Selcuk Univ, High Technol Res & Applicat Ctr, TR-42031 Selcuklu, Konya, Turkey

[3] Selcuk Univ, Laser Induced Proton Therapy Applicat & Res Ctr, TR-42031 Selcuklu, Konya, Turkey

来源：

OPTIK | 2019年 / 199卷

关键词：

Solar cell; PLD; Ultrathin films; CZTS; Efficiency; Si; PULSED-LASER DEPOSITION; CU2ZNSNS4; THIN-FILMS; ELECTRICAL-PROPERTIES; TEMPERATURE; PERFORMANCE; FABRICATION;

D O I：

10.1016/j.ijleo.2019.163370

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, Au/n-Si/p-CZTS/Ag solar cells have been produced by using PLD technique. Ultrathin CZTS films have been grown on n-Si wafer in different thicknesses depending on number of laser pulses. These ultrathin CZTS films were analysed by XRD, AFM and UV-vis spectra. J-V characteristics of Au/n-Si/p-CZTS/Ag solar cells have been determined based on thickness of ultrathin CZTS films under AM 1.5 solar radiation of 80 mW/cm(2). Short circuit current density (mA/cm(2)), fill factor, open circuit voltage (V) and power conversion efficiency (%) of ultrathin CZTS film solar cells have been determined for device produced in this work. The photovoltaic (PV) characteristics of ultrathin CZTS film solar cells has been discussed in detail in this present article and, as a result, the ideal ultrathin CZTS film solar cell structure having the highest efficiency has been determined and concluded.

引用

页数：11

共 65 条

[1]

Afify H., 2005, EGYPT J SOLIDS, V28, P243

[2] Chalcopyrite/Si Heterojunctions for Photovoltaic Applications [J].

Akpa, O. ;

Shoieb, S. ;

Thompson, T. ;

Isaacs-Smith, T. ;

Anderson, P. ;

Seraphin, S. ;

Das, K. .

JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (11) :2462-2466

[3]

[Anonymous], [No title captured]

[4] The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/N-Si Schottky barrier diodes [J].

Ayyildiz, E ;

Lu, ÇNH ;

Türüt, A .

JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (02) :119-123

[5]

Bakr N. A., 2016, Int. J. Mater. Sci. Appl., V5, P261, DOI [10.11648/j.ijmsa.20160506.15, DOI 10.11648/J.IJMSA.20160506.15]

[6] Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation [J].

Bao, Wujisiguleng ;

Ichimura, Masaya .

INTERNATIONAL JOURNAL OF PHOTOENERGY, 2015, 2015

[7] Stoichiometry control in Cu2ZnSnS4 thin films grown by pulsed laser deposition [J].

Beres, M. ;

Yu, K. M. ;

Syzdek, J. ;

Mao, S. S. .

MATERIALS CHEMISTRY AND PHYSICS, 2018, 205 :90-96

[8] Discrimination and detection limits of secondary phases in Cu2ZnSnS4 using X-ray diffraction and Raman spectroscopy [J].

Berg, Dominik M. ;

Arasimowicz, Monika ;

Djemour, Rabie ;

Guetay, Levent ;

Siebentritt, Susanne ;

Schorr, Susan ;

Fontane, Xavier ;

Izquierdo-Roca, Victor ;

Perez-Rodriguez, Alejandro ;

Dale, Phillip J. .

THIN SOLID FILMS, 2014, 569 :113-123

[9] DEPENDENCE OF SERIES RESISTANCE ON OPERATING CURRENT IN P-N-JUNCTION SOLAR-CELLS [J].

BHATTACHARYA, DK ;

MANSINGH, A ;

SWARUP, P .

SOLAR CELLS, 1986, 18 (02) :153-162

[10] Electrical properties and back contact study of CZTS/ZnS heterojunction [J].

Boutebakh, F. Z. ;

Zeggar, M. Lamri ;

Attaf, N. ;

Aida, M. S. .

OPTIK, 2017, 144 :180-190

← 1 2 3 4 5 6 7 →