High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

被引：215

作者：

Yan, Zhibo ^{[1
,3
]}

Guo, Yanyan ^{[1
,3
]}

Zhang, Guoquan ^{[1
,3
]}

Liu, J. -M. ^{[1
,2
,3
]}

机构：

[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

[2] S China Normal Univ, Sch Phys, Guangzhou 510631, Guangdong, Peoples R China

[3] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 11期

基金：

中国国家自然科学基金;

关键词：

RESISTIVE-SWITCHING MEMORY; OXYGEN VACANCIES; ELECTRONICS;

D O I：

10.1002/adma.201004306

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Non-volatile memory cells using Co-doped BaTiO3 as an active layer exhibit high-performance unipolar resistive switching characteristics, with a resistance ratio over 10(4), retention time longer than 7 x 10(4) s, endurance over 10(5) cycles, and switching speed less than 10 ns/70 ns for SET/RESET. Under high electric field and large Joule heating, the easily varied valence of Co ions, the preexisting oxygen vacancies with sufficiently high density, and the local itinerant electrons introduced by the Co-doping all favor the local metal-insulator phase transition and therein the formation/rupture of conductive filaments, contributing to the stable resistive switching.

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收藏

页码：1351 / 1355

页数：5

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