Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

被引：29

作者：

Johnson, Robert A., III ^{[1
,2
]}

Javanainen, Arto ^{[4
]}

Raman, Ashok ^{[5
]}

Chakraborty, Partha S. ^{[5
]}

Arslanbekov, Robert R. ^{[5
]}

Witulski, Arthur F. ^{[1
,2
]}

Ball, Dennis R. ^{[1
,2
]}

Galloway, Kenneth F. ^{[1
,2
]}

Sternberg, Andrew L. ^{[1
,2
]}

Reed, Robert A. ^{[1
,2
]}

Schrimpf, Ronald D. ^{[1
,2
]}

Alles, Micheal L. ^{[1
,2
]}

Lauenstein, Jean-Marie ^{[3
]}

机构：

[1] Vanderbilt Univ, Elect Engn & Comp Sci Dept, 221 Kirkland Hall, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Inst Space & Def Elect, 221 Kirkland Hall, Nashville, TN 37235 USA

[3] NASA, GSFC, Greenbelt, MD 20771 USA

[4] Univ Jyvaskyla, Dept Phys, FI-40014 Jyvaskyla, Finland

[5] CFDRC, Huntsville, AL 35806 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 01期

关键词：

Schottky diodes; silicon carbide (SiC); single-event effects; vertical metal oxide semiconductor field-effect transistor (MOSFET); SINGLE-EVENT BURNOUT; BARRIER DIODES; MECHANISMS; DAMAGE;

D O I：

10.1109/TNS.2019.2947866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.

引用

页码：135 / 139

页数：5

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