In Situ Co/SiC(N,H) Capping Layers for Cu/Low-k Interconnects

被引：19
|
作者：
Yang, C. -C. [1 ,2 ]
Li, B. [3 ]
Shobha, H. [1 ,2 ]
Nguyen, S. [1 ,2 ]
Grill, A. [1 ,2 ]
Ye, W. [4 ]
AuBuchon, J. [4 ]
Shek, M. [4 ]
Edelstein, D. [1 ,2 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Res, Albany, NY 12203 USA
[3] IBM Microelect, Essex Jct, VT 05452 USA
[4] Appl Mat Inc, Santa Clara, CA 95052 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期
关键词：
Cobalt; electromigration (EM); in situ capping process; selective deposition; DEPOSITION;
D O I：
10.1109/LED.2012.2183850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical vapor deposition. Both in situ and ex situ Co/SiC(N,H) capping processes were evaluated and have shown comparable parametrics to the control reference. For the ex situ capping process, the degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Without increasing the Co cap thickness, further EM lifetime enhancement was observed from the in situ capping process.
引用
收藏
页码：588 / 590
页数：3
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