A Monte Carlo simulation for phonon transport within silicon structures at nanoscales with heat generation

被引：58

作者：

Wong, Basil T. ^{[1
]}

Francoeur, Mathieu ^{[2
]}

Menguc, M. Pinar ^{[3
,4
]}

机构：

[1] Swinburne Univ Technol, Sch Engn Comp & Sci, Kuching 93350, Sarawak, Malaysia

[2] Univ Utah, Dept Mech Engn, Salt Lake City, UT 84112 USA

[3] Ozyegin Univ, Ctr Energy Environm & Econ, TR-34662 Istanbul, Turkey

[4] Univ Kentucky, Dept Mech Engn, Lexington, KY 40506 USA

来源：

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER | 2011年 / 54卷 / 9-10期

关键词：

Monte Carlo; Phonon transport; Silicon thin film; Heat generation; Ballistic transport; Near-field thermal radiation; The Fourier law; Heat diffusion equation; THERMAL-CONDUCTIVITY; RADIATIVE-TRANSFER; ELECTRON-BEAM; DISPERSION; SCATTERING; PREDICTION; LAYERS; FILMS;

D O I：

10.1016/j.ijheatmasstransfer.2010.10.039

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Nanoscale phonon transport within silicon structures subjected to internal heat generation was explored. A Monte Carlo simulation was used. The simulation procedures differed from the current existing methods in which phonons below a predefined "reference temperature" were not accounted to reduce memory storage and computational resources. Results indicated that the heat diffusion equation significantly underestimates temperature distribution at nanoscales in the presence of an external heat source. Discussions on temperature distribution inside silicon thin film when heated by a pulsed laser, an electron beam or due to near-field thermal radiation effects were also provided. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1825 / 1838

页数：14

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