Charge profile of surface doped C60

被引：23
|
作者：
Wehrli, S [1 ]
Poilblanc, D
Rice, TM
机构：
[1] ETH Zurich, CH-8093 Zurich, Switzerland
[2] Univ Toulouse 3, Phys Quant Lab, UMR 5626, F-31062 Toulouse, France
来源：
EUROPEAN PHYSICAL JOURNAL B | 2001年 / 23卷 / 03期
关键词：
D O I：
10.1007/s100510170054
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We study the charge profile of a C-60-FET (field effect transistor) as used in the experiments of Schon, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than similar to0.3 electron (or hole) per C-60 molecule. The morahedral disorder of the C-60 molecules smoothens the structure in the density of states.
引用
收藏
页码：345 / 350
页数：6
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