Charge profile of surface doped C60

被引：23

作者：

Wehrli, S ^{[1
]}

Poilblanc, D

Rice, TM

机构：

[1] ETH Zurich, CH-8093 Zurich, Switzerland

[2] Univ Toulouse 3, Phys Quant Lab, UMR 5626, F-31062 Toulouse, France

来源：

EUROPEAN PHYSICAL JOURNAL B | 2001年 / 23卷 / 03期

关键词：

D O I：

10.1007/s100510170054

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the charge profile of a C-60-FET (field effect transistor) as used in the experiments of Schon, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than similar to0.3 electron (or hole) per C-60 molecule. The morahedral disorder of the C-60 molecules smoothens the structure in the density of states.

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收藏

页码：345 / 350

页数：6

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