Performance of ALD WNXCY as a Cu barrier in oxide and porous low-k dual damascene structures

被引：0

作者：

Chen, L ^{[1
]}

Book, G ^{[1
]}

Smith, S ^{[1
]}

Rasco, M ^{[1
]}

Li, WM ^{[1
]}

Kostamo, J ^{[1
]}

Tuominen, M ^{[1
]}

Pfeifer, K ^{[1
]}

Iacoponi, J ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75265 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003) | 2004年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper presents the integration of ultra-thin (similar to25Angstrom) ALD WNxCy as a Cu barrier in a dual damascene structure for both oxide and porous low-k dielectrics. Data on 200mm oxide wafers include complete electrical probe and reliability performance. Preliminary oxide electrical data are also presented on 300mm wafers, demonstrating the extendibility of the ALD technique. Lastly, we present data on the integration of ALD WNxCy on a porous low-k material including an attempt to seal the pores using a CVD SiCN dielectric liner on 200mm wafers.

引用

页码：729 / 735

页数：7