Effects of Interfacial Layer on Characteristics of TiN/ZrO2 Structures

被引：7

作者：

Kim, Younsoo ^{[1
]}

Kang, Sang Yeol ^{[1
]}

Choi, Jae Hyoung ^{[1
]}

Lim, Jae Soon ^{[1
]}

Park, Min Young ^{[1
]}

Chung, Suk-Jin ^{[1
]}

Chung, Jaegwan ^{[2
]}

Lee, Hyung Ik ^{[2
]}

Kim, Ki Hong ^{[2
]}

Kyoung, Yong Koo ^{[2
]}

Heo, Sung ^{[2
]}

Yoo, Cha Young ^{[1
]}

Kang, Ho-Kyu ^{[1
]}

机构：

[1] Samsung Elect Ltd, Semicond R&D Ctr, Proc Dev Team, Hwaseong City 445701, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Grp, Yongin 446712, Gyeonggi Do, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 09期

关键词：

Interfacial Layer; ZrCN Layer; Oxidation of TIN; SILC; Sweep Test;

D O I：

10.1166/jnn.2011.5043

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TIN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TIN oxidation and a seed layer of ZrO2 growth.

引用

页码：8309 / 8312

页数：4

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