Effects of Interfacial Layer on Characteristics of TiN/ZrO2 Structures

被引：7

作者：

Kim, Younsoo ^{[1
]}

Kang, Sang Yeol ^{[1
]}

Choi, Jae Hyoung ^{[1
]}

Lim, Jae Soon ^{[1
]}

Park, Min Young ^{[1
]}

Chung, Suk-Jin ^{[1
]}

Chung, Jaegwan ^{[2
]}

Lee, Hyung Ik ^{[2
]}

Kim, Ki Hong ^{[2
]}

Kyoung, Yong Koo ^{[2
]}

Heo, Sung ^{[2
]}

Yoo, Cha Young ^{[1
]}

Kang, Ho-Kyu ^{[1
]}

机构：

[1] Samsung Elect Ltd, Semicond R&D Ctr, Proc Dev Team, Hwaseong City 445701, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Grp, Yongin 446712, Gyeonggi Do, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 09期

关键词：

Interfacial Layer; ZrCN Layer; Oxidation of TIN; SILC; Sweep Test;

D O I：

10.1166/jnn.2011.5043

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TIN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TIN oxidation and a seed layer of ZrO2 growth.

引用

页码：8309 / 8312

页数：4

共 50 条

[21] p-Type Dopants As Dual Function Interfacial Layer for Efficient and Stable Tin Perovskite Solar Cells [J].

Chen, Yuhui ;

Cao, Kun ;

Cheng, Yangfeng ;

Shen, Haoran ;

Du, Chao ;

Wang, Qichen ;

Chen, Cheng ;

Cui, Hao ;

Lan, Tao ;

Liu, Lihui ;

Shen, Wei ;

Chen, Shufen .

SOLAR RRL, 2021, 5 (05)

[22] Numerical study of the effects of Brownian motion and interfacial layer on the viscosity of nanofluid (Au-H2O) [J].

Loulijat, Hamid ;

Moustabchir, Hassane .

JOURNAL OF MOLECULAR LIQUIDS, 2022, 350

[23] Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer [J].

Li, Yan-Lin ;

Chang-Liao, Kuei-Shu ;

Chang, Yu-Wei ;

Huang, Tse-Jung ;

Li, Chen-Chien ;

Gu, Zhao-Chen ;

Chen, Po-Yen ;

Wu, Tzung-Yu ;

Huang, Jiayi ;

Chu, Fu-Chuan ;

Yi, Shih-Han .

MICROELECTRONICS RELIABILITY, 2017, 79 :136-139

[24] Improved electrical characteristics of Ge nMOSFET with suitable nitrogen content in starting interfacial layer [J].

Ruan, Dun-Bao ;

Chang-Liao, Kuei-Shu ;

Hsu, Wen-Yen ;

Yi, Shih-Han .

VACUUM, 2020, 181

[25] Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN [J].

Dutta, Mrinmoy ;

Maikap, Siddheswar ;

Qiu, Jiantai Timothy .

ADVANCED ELECTRONIC MATERIALS, 2019, 5 (02)

[26] Effects of Al dopants and interfacial layer on resistive switching behaviors of HfOx film [J].

Guo, Tingting ;

Tan, Tingting ;

Liu, Zhengtang ;

Liu, Bangjie .

JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 708 :23-28

[27] The effect of oxidation temperature on the nano crystalline structure of ZrO2 films deposited on silicon and glass substrates [J].

Larijani, M. M. ;

Najafi, D. ;

Eshghabadi, M. .

CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 46 (09) :956-960

[28] The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics [J].

Liu, Chuan-Hsi ;

Juan, Pi-Chun ;

Chou, Yi-Hsien ;

Hsu, Hung-Wen .

MICROELECTRONIC ENGINEERING, 2012, 89 :2-5

[29] Enhanced electrical characteristics of Zr/diamond Schottky barrier diode with cerium hexaboride interfacial layer [J].

Zhu, Tian-Fei ;

Shao, Guoqing ;

Min, Tai ;

Wang, Hong-Xing .

MATERIALS LETTERS, 2023, 344

[30] Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks [J].

Kamata, Y ;

Kamimuta, Y ;

Ino, T ;

Nishiyama, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B) :2323-2329

← 1 2 3 4 5 →