Effects of Interfacial Layer on Characteristics of TiN/ZrO2 Structures

被引：7
作者：
Kim, Younsoo [1 ]
Kang, Sang Yeol [1 ]
Choi, Jae Hyoung [1 ]
Lim, Jae Soon [1 ]
Park, Min Young [1 ]
Chung, Suk-Jin [1 ]
Chung, Jaegwan [2 ]
Lee, Hyung Ik [2 ]
Kim, Ki Hong [2 ]
Kyoung, Yong Koo [2 ]
Heo, Sung [2 ]
Yoo, Cha Young [1 ]
Kang, Ho-Kyu [1 ]
机构：
[1] Samsung Elect Ltd, Semicond R&D Ctr, Proc Dev Team, Hwaseong City 445701, Gyeonggi Do, South Korea
[2] Samsung Adv Inst Technol, Analyt Engn Grp, Yongin 446712, Gyeonggi Do, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 09期
关键词：
Interfacial Layer; ZrCN Layer; Oxidation of TIN; SILC; Sweep Test;
D O I：
10.1166/jnn.2011.5043
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TIN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TIN oxidation and a seed layer of ZrO2 growth.
引用
收藏
页码：8309 / 8312
页数：4
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