Monitoring of inner wall condition in mass-production plasma etching process using a load impedance monitoring system

被引：8

作者：

Kasashima, Yuji ^{[1
]}

Kurita, Hiroyuki ^{[2
]}

Kimura, Naoya ^{[2
]}

Ando, Akira ^{[3
]}

Uesugi, Fumihiko ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Tosu, Saga 8410052, Japan

[2] ADVANTEST Corp, ASD Test & Measurement Syst Business Grp, Ora, Gunma 3700718, Japan

[3] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 06期

关键词：

END-POINT DETERMINATION; LASER-LIGHT; PARTICLE; CHAMBER; REDUCTION; EQUIPMENT; DESIGN;

D O I：

10.7567/JJAP.54.060301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work describes the detection of changes in the inner wall condition of mass-production plasma etching equipment using a load impedance monitoring system. The system detects the change in the imaginary part of the load impedance from a 50-Omega transmission line when the inner wall condition changes following exposure to the atmosphere. The results demonstrate that the system can be used as a practical method for real-time and noninvasive monitoring of the wall condition of etching chambers. This method will contribute to improvements in production yield and overall equipment effectiveness, and the development of predictive maintenance in semiconductor manufacturing. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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