Layer thickness dependence of the phase separation and phase change properties of Ge2Sb2Te5/TiN superlattice-like thin films

被引：4

作者：

Zheng, Long ^{[1
,2
,3
,5
]}

Hu, Yifeng ^{[1
]}

Yang, Xingming ^{[2
,3
]}

Xie, Weimei ^{[2
,3
]}

Zhu, Xiaoqin ^{[1
]}

Lai, Tianshu ^{[4
]}

Song, Zhitang ^{[5
]}

机构：

[1] Jiangsu Univ Technol, Sch Math & Phys, Changzhou 213001, Peoples R China

[2] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China

[4] Sun Yat Sen Univ, Dept Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[5] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2018年 / 238卷

关键词：

Ge2Sb2Te5; Superlattice-like structure; Phase separation; Phase-change memory; ULTRA-HIGH-SPEED; RAMAN-SCATTERING; MECHANISM;

D O I：

10.1016/j.mseb.2018.12.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence on the layer thickness of the structural and phase change properties of Ge2Sb2Te5/TiN superlattice-like thin films are investigated. The phase separation of binary Sb2Te3 and GeTe phases is investigated using X-ray diffraction and Raman spectral analysis. The Ge2Sb2Te5/TiN interface is believed lead to phase separation, as well as the interface effects that facilitate the phase separation process in the superlattice-like films. In this investigation of the phase change properties, the critical temperature, 10-year lifetime temperature, phase change speed, and optical band gap are measured. We found that the phase change properties of Ge2Sb2Te5 are greatly improved by increasing the layer thickness as a result of the phase separation suppression in the structure. This superlattice-like thin film may have potential in high-speed phase change memory applications.

引用

页码：71 / 75

页数：5

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