Electrical properties of SrBi2Ta2O9 single crystals grown by self-flux solution

被引：13

作者：

Amorín, H ^{[1
]}

Costa, MEV ^{[1
]}

Kholkin, AL ^{[1
]}

Baptista, JL ^{[1
]}

机构：

[1] Univ Aveiro, CICECO, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

关键词：

bi-layered ferroelectrics; ferroelectric properties; self-flux growth; SrBi2Ta2O9; single-crystals;

D O I：

10.1016/S0955-2219(03)00556-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-quality SrBi2Ta2O9 single crystals were grown by a self-flux solution method using Bi2O3 added with B2O3 flux. Chemical composition corresponded to the formula SrxBiyTa2O9 where x = 1.03 +/- 0.05 and y = 1.87 +/- 0.08. Transparent SBT crystals obtained by slow cooling (2 degreesC/h) of the melt from 1350 degreesC to 1100 degreesC, exhibit platelet morphology with typical sizes of 5 x 3 x 0.05 mm(3) dimensions with a dominant (001) orientation of a major face. Ferroelectric hysteresis and dielectric properties are measured perpendicularly to the major face of the crystals. Anisotropy, crystalline orientation, growth mechanism, and their influence on electrical properties are discussed. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1535 / 1539

页数：5

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