Electrical conductivity and crystallization kinetics of Se70Te30 films

被引：20

作者：

Moharram, AH ^{[1
]}

机构：

[1] Assiut Univ, Dept Phys, Assiut, Egypt

来源：

THIN SOLID FILMS | 2001年 / 392卷 / 01期

关键词：

amorphous materials; chalcogen; electrical properties; electron microscopy; crystallization kinetics;

D O I：

10.1016/S0040-6090(01)00968-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Glassy Se70Te30 thin films were thermally evaporated onto chemically cleaned glass substrates. Crystallization kinetics were determined under isothermal conditions. DC conductivity of the investigated film was used as a parameter to calculate the crystallized fraction chi (t) The values obtained for the activation energy of crystallization and the Avrami index were 239.8 +/- 0.5 kJ/mol and 2.21 +/- 0.1, respectively. The non-integer value of the Avrami index indicates that two crystallization mechanisms, one- and two-dimensional growth, are responsible for the crystallization process. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：34 / 39

页数：6

共 18 条

[1] DIFFERENTIAL SCANNING CALORIMETRIC STUDY OF CHALCOGENIDE GLASS SE0.7TE0.3 [J].