Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

被引：123

作者：

Nakaharai, Shu ^{[1
]}

Yamamoto, Mahito ^{[1
]}

Ueno, Keiji ^{[2
]}

Lin, Yen-Fu ^{[1
,3
]}

Li, Song-Lin ^{[1
]}

Tsukagoshi, Kazuhito ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitechton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Saitama 3388570, Japan

[3] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan

来源：

ACS NANO | 2015年 / 9卷 / 06期

基金：

日本学术振兴会;

关键词：

transition metal dichalcogenide; molybdenum ditelluride; field-effect transistor; ambipolar; polarity control; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; MONOLAYER; ELECTRON; DIODES; LAYERS; SCATTERING; TRANSPORT; CIRCUITS;

D O I：

10.1021/acsnano.5b00736

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A doping-free transistor made of ambipolar cc-phase molybdenum ditelluride (alpha-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

引用

页码：5976 / 5983

页数：8

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