Growth and characteristics of optical single crystals for UV/VUV applications

被引：21
作者：
Shimamura, Kiyoshi [1 ]
Villora, Encarnacion G. [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
JOURNAL OF FLUORINE CHEMISTRY | 2011年 / 132卷 / 12期
关键词：
Ferroelectric fluoride; BaMgF4; beta-Ga2O3; LED; Substrate; F-doping; Core-free Y3Al5O12; GALLIUM OXIDE; BAMGF4; GENERATION; BETA-GA2O3; GAN;
D O I：
10.1016/j.jfluchem.2011.06.044
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Ferroelectric fluoride BaMgF4, beta-Ga2O3 and F-doped core-free Y3Al5O12 single crystals for ultraviolet and vacuum ultraviolet (UV/VUV) applications, are introduced. 2-in. size BaMgF4 single crystals have been grown. Subsequently, second harmonic generation (SHG) in different wavelengths was demonstrated by the quasi-phase matching (QPM) devices. 2-in, size beta-Ga2O3 single crystals, which have large bandgap, 4.8 eV, have been grown. Blue light emitting diodes (LEDs) on beta-Ga2O3 were demonstrated. F-doped core-free Y3Al5O12 single crystals have been grown as a potential new lens material for UV/VUV. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1040 / 1046
页数：7
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