Hydrogen induced defects at Si-SiO2 interfaces

被引：0

作者：

Chadi, DJ ^{[1
]}

机构：

[1] NEC Res Inst, Princeton, NJ 08540 USA

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen, N, P, electron and hole-induced defect reactions at Si-SiO2 interfaces were examined using a first-principles total-energy approach. We find that hydrogen promotes the migration of oxygen atoms from SiO2 into Si, resulting in oxygen vacancy formation in SiO2. Electron injection into SiO2 is also expected to lead to the formation of oxygen vacancies. The initial process is the formation of an oxygen vacancy-interstitial complex followed by the migration of the interstitial into Si, leaving behind a vacancy defect in SiO2.

引用

页码：1757 / 1758

页数：2

共 7 条

[1] ATOMIC HYDROGEN-INDUCED DEGRADATION OF THIN SIO2 GATE OXIDES
CARTIER, E
BUCHANAN, DA
STATHIS, JH
DIMARIA, DJ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 : 244 - 247
[2] Oxygen configurations in silica
Chelikowsky, JR
Chadi, DJ
Binggeli, N
[J]. PHYSICAL REVIEW B, 2000, 62 (04) : R2251 - R2254
[3] THE SILICON SILICON-DIOXIDE SYSTEM - ITS MICROSTRUCTURE AND IMPERFECTIONS
HELMS, CR
POINDEXTER, EH
[J]. REPORTS ON PROGRESS IN PHYSICS, 1994, 57 (08) : 791 - 852
[4] Hole-injection-induced structural transformation of oxygen vacancy in α-quartz
Oshiyama, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2B): : L232 - L234
[5] STUDY OF THE ATOMIC MODELS OF 3 DONORLIKE DEFECTS IN SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES FROM THEIR GATE MATERIAL AND PROCESS DEPENDENCIES
SAH, CT
SUN, JYC
TZOU, JJT
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1525 - 1545
[6] First-principles calculations for charged states of hydrogen atoms in SiO2
Yokozawa, A
Miyamoto, Y
[J]. PHYSICAL REVIEW B, 1997, 55 (20): : 13783 - 13788
[7] First-principles exploration of possible trap terminators in SiO2
Yokozawa, A
Miyamoto, Y
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1122 - 1124

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