Over-Clocked SSD: Safely Running Beyond Flash Memory Chip I/O Clock Specs

被引:0
作者
Zhao, Kai [1 ]
Venkataraman, Kalyana S. [2 ]
Zhang, Xuebin [1 ]
Li, Jiangpeng [3 ]
Zheng, Ning [1 ]
Zhang, Tong [1 ]
机构
[1] Rensselaer Polytech Inst, ECSE Dept, Troy, NY 12181 USA
[2] Cavium, Marlborough, MA USA
[3] Shanghai Jiao Tong Univ, Shanghai 200030, Peoples R China
来源
2014 20TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE COMPUTER ARCHITECTURE (HPCA-20) | 2014年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a design strategy that enables aggressive use of flash memory chip I/O link over-clocking in solid-state drives (SSDs) without sacrificing storage reliability. The gradual wear-out and process variation of NAND flash memory makes the worst-case oriented error correction code (ECC) in SSDs largely under-utilized most of the time. This work proposes to opportunistically leverage under-utilized error correction strength to allow error-prone flash memory I/O link over-clocking. Its rationale and key design issues are presented and studied in this paper, and its potential effectiveness has been verified through hardware experiments and system simulations. Using sub-22nm NAND flash memory chips with I/O specs of 166MBps, we carried out extensive experiments and show that the proposed design strategy can enable SSDs safely operate with error-prone I/O link running at 275MBps. Trace-driven SSD simulations over a variety of workload traces show the system read response time can be reduced by over 20%.
引用
收藏
页码:536 / 545
页数:10
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