Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

被引:72
作者
Inazu, Tetsuhiko [1 ]
Fukahori, Shinya [1 ]
Pernot, Cyril [1 ]
Kim, Myung Hee [1 ]
Fujita, Takehiko [1 ]
Nagasawa, Yosuke [1 ]
Hirano, Akira [1 ]
Ippommatsu, Masamichi [1 ]
Iwaya, Motoaki [2 ]
Takeuchi, Tetsuya [2 ]
Kamiyama, Satoshi [2 ]
Yamaguchi, Masahito [3 ]
Honda, Yoshio [3 ]
Amano, Hiroshi [3 ]
Akasaki, Isamu [2 ]
机构
[1] Meijo Univ, UV Craftory Co Ltd, Nagoya, Aichi 4680073, Japan
[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[3] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan
关键词
D O I
10.1143/JJAP.50.122101
中图分类号
O59 [应用物理学];
学科分类号
摘要
AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with aluminum reflective electrodes deposited to cover both p-and n-mesh contact electrodes have been fabricated. A 1.55-fold increase in light extraction efficiency has been demonstrated. Despite their reduced contact area, the LEDs exhibited only a slight increase in forward voltage of 0.45 V at 20 mA. Also, their 50% lifetime was estimated to be about 10,000 h at 20mA DC at room temperature by extrapolation. Owing to the reflective electrodes, a 288nm LED with external quantum efficiency as high as 5.4% was achieved. The light output power was 4.6mW at 20 mA. (C) 2011 The Japan Society of Applied Physics
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页数:3
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