Mn-activated Y2O3-GeO2 phosphors for thin-film electroluminescent devices

被引:18
作者
Minami, T [1 ]
Yamazaki, M [1 ]
Miyata, T [1 ]
Shirai, T [1 ]
机构
[1] Kanazawa Inst Technol, Optoelect Device Syst R&D Ctr, Nonoichi, Ishikawa 9218501, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 8B期
关键词
oxide phosphor; thin-film electroluminescent device; electroluminescence; phosphor; thin film; Y2O3; Y4GeO8; Y2GeO5; Y2Ge2O7; GeO2;
D O I
10.1143/JJAP.40.L864
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new multicomponent oxide phosphor, Mn-activated Y2O3-GeO2, is demonstrated to be very promising as the thin-film emitting layer for thin-film electroluminescent (TFEL) devices. High-luminance yellow emissions were obtained in TFEL devices Using (Y2O3-GeO2):Mn thin films prepared with a GeO2 content of 0 to 100 mol%: 1756, 2500, 758 and 1629 cd/m(2) in 1-k-Hz-driven TFEL devices fabricated using Y2O3:Mn, Y4GeO8:Mn, Y2GeO5:Mn and Y2Ge2O7:Mn phosphor thin films, i.e., a GeO2 content of 0, 33, 50 or 67 mol%, respectively. In addition, high luminous efficiencies of 2.8, 3.4, 1.5 and 4.5 Im/W, respectively, were obtained in these TFEL devices using a driving voltage at 60 Hz.
引用
收藏
页码:L864 / L866
页数:3
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