EUV Dark-Field Microscopy for Defect Inspection

被引：8

作者：

Juschkin, L. ^{[1
]}

Maryasov, A. ^{[1
]}

Herbert, S. ^{[1
]}

Aretz, A. ^{[2
]}

Bergmann, K. ^{[3
]}

Lebert, R. ^{[4
]}

机构：

[1] RWTH Aachen Univ & JARA Fundamentals Future Infor, Chair Technol Opt Syst TOS, Steinbachstr 15, D-52074 Aachen, Germany

[2] RWTH Aachen Univ & JARA Fundamentals Future Infor, Cent Fac Elect Microscopy GFE, D-52074 Aachen, Germany

[3] Fraunhofer Inst Laser Technol, D-52074 Aachen, Germany

[4] Bruker Adv Supercon GmbH, D-51429 Bergisch Gladbach, Germany

来源：

10TH INTERNATIONAL CONFERENCE ON X-RAY MICROSCOPY | 2011年 / 1365卷

关键词：

Soft x-ray; actinic microscopy; defect inspection; multilayer mask; EUV; DPP source; EUV defects; actinic mask blank inspection; EUV microscopy; metrology;

D O I：

10.1063/1.3625355

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table-top discharge-produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective-based EUV microscope at 13.5-nm wavelength and then characterized with an atomic force microscope. Possible defect-detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance.

引用

页码：265 / 268

页数：4

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