A Compact Drain Current Model for Graded Channel DMDG Structure with High-k Material

This article depicts the drain current for a graded channel double metal double gate (GCDMDG) device in a unique way. This work offers a thorough examination of the drain current differences between the high-k as well as SiO2 oxide material. The high-k material HfO2 reduces the short channel effects (SCEs) caused by device downsizing. The model's structure is influenced by a number of parameters, including channel length, film thickness, oxide thickness, temperature changes, and the voltages of the drain and gate sources. So, a clear reflection of how the drain current is fluctuating with various parameters created by SCEs can be observed. In all circumstances, high-k materials improve transfer characteristics and minimise SCEs in a controlled manner, which are mostly generated as a result of device structure reduction. The transconductance and drain conductance described in this article also show that in the situation of short scale dimensions, using high-k material performs superior than the traditional one. A lot of similarities have been found among the analytical model and the TCAD outcome.