GaMnAs-based hybrid multiferroic memory device

被引：88

作者：

Overby, M. ^{[1
]}

Chernyshov, A. ^{[1
]}

Rokhinson, L. P. ^{[1
]}

Liu, X. ^{[2
]}

Furdyna, J. K. ^{[2
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2917481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a nonvolatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field. (c) 2008 American Institute of Physics.

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页数：3

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