High-performance field effect transistors based on large ratio metal (Al, Ga, Cr) doped In2O3 nanofibers

Indium oxide nanofibers (In203 NFs) are considered to be one of the possible channel materials for future electronic devices, however, these NFs devices suffer from low on/off current ratio (10,110//), large negative threshold voltage (VTH), and high leakage current due to the excess carriers in NFs. A facile one-step electrospinning technique is employed to synthesize metal element (aluminum (Al), chromium (Cr) or gallium (Ga)) highly-doped In203 NFs to both improve the electrical performance of the NFs field effect transistors (FETs) and reduce the consumption of indium. The devices exhibit optimal performance at 10 mol% doping concentration (Al, Cr and Ga): small and positive VTH (<6.0 V), large 10,110ff (-108), high saturation current (-10-4 A), and decent carrier mobility (-2.0 cm2/V-is-1). When a high-k AlOx thinfilm is employed as the gate dielectric for the NFs FETs (10 mol% Al In203 NFs), the gate voltage and drain voltage is reduced to 5 V and 3 V, respectively, and the pre is increased by 6X. Furthermore, 10 mol% Al In203 NFs FETs with enhancement-mode operation were integrated into highly efficient NMOS inverters. All the results indicate that the highly metal -doped In203 NFs have practical application for nextgeneration low-cost, large-area, energy-efficient and high-performance nanoelectronic devices. 2020 Elsevier B.V. All rights reserved.