Optimal design of heterostructure tunnel diode with nonlinear current-voltage characteristic

被引：3

作者：

Magruder, Kelly C. ^{[1
]}

Levi, A. F. J. ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2012年 / 44卷 / 7-8期

关键词：

SELF-CONSISTENT MODEL; PARAMETERS; RECEIVER; DEVICES;

D O I：

10.1016/j.physe.2012.03.018

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optimal design applied to an Al xi Ga1-xi As heterostructure tunnel diode is used to achieve a parametrically defined nonlinear current-voltage characteristic. The design predicts that a significant reduction in spurious frequency components from a switching RF mixer can be realized using a device that is less than 17 nm thick. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：1503 / 1509

页数：7

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