Stress measurement and stress relaxation during magnetron sputter deposition of cubic boron nitride thin films

Dynamic in situ analysis of stress and film thickness provide fast and more physical information on growth and stress evolution in cBN layers than integrating (ex situ) methods. Especially, features of the layered structure of boron nitride films, like the evolution of instantaneous stress and growth rates during deposition can be resolved by in situ methods. This work is concerned with dynamic in-situ stress measurement by means of cantilever bending during magnetron sputter deposition of cBN thin films. Laser deflection in combination with in situ ellipsometry is used to determine the instantaneous stress of the films. The results show in agreement with results that were obtained previously from ion beam assisted deposition (IBAD), that the ON and cBN layers exhibit different levels of stress under constant deposition conditions. The stress increases from less than -4 GPa to very high values (-10 GPa) after the coalescence of the cBN nuclei. Therefore, it is possible to establish the point of cBN nucleation instantly. A simultaneous medium energy ion bombardment is used for stress relaxation during film deposition. A modified substrate bias voltage, combining negative high and low voltage pulses, is used to enable an ion bombardment of the growing film with energies up to 8 keV In this way, cBN films with a stress as low as -1.7 GPa could be produced without destroying the sp(3)-bonds significantly. (C) 2003 Elsevier B.V. All rights reserved.