Electric-field-induced transport of protons in amorphous SiO2 -: art. no. 233406

被引：18
|
作者：
Devine, RAB
Herrera, GV
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.63.233406
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The temperature and time dependence of electric-field-induced motion of thermally generated protons in 20 nm amorphous SiO2 films has been investigated The short-time behavior is found to involve an activation energy of similar to0.38 eV and a hopping distance of similar to0.55 nm. The activation energy is considerably smaller than that found for radiation-generated proton motion (similar to0.82 eV). The hopping distance is consistent with transport involving motion between a bridging oxygen atom and a next-nearest-neighbor (or farther) bridging oxygen atom; this suggests that motion is primarily via cross-ring hopping.
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页数：4
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