Energy Transfer between Silicon Nanocrystals

被引：15

作者：

Gusev, O. B. ^{[1
]}

Prokofiev, A. A. ^{[1
]}

Maslova, O. A. ^{[1
]}

Terukov, E. I. ^{[1
]}

Yassievich, I. N. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

JETP LETTERS | 2011年 / 93卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

PHOTOLUMINESCENCE; EXCITATION;

D O I：

10.1134/S0021364011030064

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that the energy migration between silicon nanocrystals embedded into a silicon dioxide host is caused by the "nonresonant" dipole-dipole interaction. This process is efficient only for a part of small nanocrystals among the whole ensemble of nanocrystals. The nonresonant dipole-dipole energy transfer has such a feature as the emission of two optical phonons at each step of the process. The time of the excitation transfer has been experimentally determined for nanocrystals 1.5 nm in size existing in the ensemble of nanocrystals with a density of 10(18) cm(-3) and the size distribution with a standard deviation of 20%. A value of 30 mu s obtained for this time is in good agreement with the performed theoretical estimation.

引用

页码：147 / 150

页数：4

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