Internal photoemission spectroscopy of [TaN/TaSiN] and [TaN/TaCN] metal stacks on SiO2 and [HfO2/SiO2] dielectric stack

被引：8

作者：

Nguyen, N. V. ^{[1
]}

Xiong, H. D. ^{[1
]}

Suehle, J. S. ^{[1
]}

Kirillov, O. A. ^{[1
]}

Vogel, E. M. ^{[2
]}

Majhi, P. ^{[3
]}

Wen, H. -C. ^{[3
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Univ Texas Dallas, Dept Elect Engn, Dallas, TX 75080 USA

[3] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2890760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

There is an intense search for metal gates for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (Phi(0)) at its interface with a gate dielectric must be known to select a suitable metal. In this letter, internal photoemission was used to determine Phi(0) of two technologically important ternary metals, [TaN/TaSiN] and [TaN/TaCN], on a single SiO(2) layer and a [HfO(2)/SiO(2)] stack. On SiO(2), Phi(0) was found to be 3.36 and 3.55 eV at the [TaN/TaSiN] stack/SiO(2) and [TaN/TaCN stack]/SiO(2) interfaces, respectively. However, on the [HfO(2)/SiO(2)] stack, Phi(0) was found be the same at 2.5 eV for both metal stacks. These results are compared to flatband voltage measurements. (c) 2008 American Institute of Physics.

引用

页数：3

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