Investigation of Self-Catalyzed GaAs NW Growth by Monte Carlo Simulation

被引：0

作者：

Suprunets, Anastasiya G. ^{[1
]}

Vasilenko, Maxim A. ^{[1
]}

Shwartz, Nataliya L. ^{[1
,2
]}

机构：

[1] Novosibirsk State Tech Univ, Novosibirsk, Russia

[2] AV Rzhanov Inst Semicond Phys SB RAS, Novosibirsk, Russia

来源：

2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM) | 2014年

关键词：

GaAs; nanowires; Monte Carlo; simulation; MOLECULAR-BEAM EPITAXY; MBE GROWTH; NANOWIRES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a kinetic lattice Monte Carlo model self-catalyzed growth of GaAs nanowire (NW) on GaAs(111) B surface was realized. Dependence of NW morphology on growth parameters was demonstrated. Existence of optimal temperature and gallium/arsenic flux ratio, corresponding to maximal GaAs nanowire growth rate, was shown. NW growth rate was linearly depended on arsenic flux in wide range of arsenic flux intensity. Obtained decreasing dependence of self-catalyzed NW growth rate on initial catalyst drop diameter was less abrupt than for catalytic growth. The optimal growth temperature of self-catalyzed growth was higher than of catalytic growth. Self-catalyzed growth was demonstrated to be more sensitive to gallium/arsenic flux ratio than catalytic one.

引用

页码：14 / 18

页数：5

共 28 条

[11] Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires [J].

Fontcuberta i Morral, A. ;

Colombo, C. ;

Abstreiter, G. ;

Arbiol, J. ;

Morante, J. R. .

APPLIED PHYSICS LETTERS, 2008, 92 (06)

[12] Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires [J].

Fontcuberta i Morral, Anna ;

Spirkoska, Dance ;

Arbiol, Jordi ;

Heigoldt, Matthias ;

Morante, Joan Ranion ;

Abstreiter, Gerhard .

SMALL, 2008, 4 (07) :899-903

[13] Predictive modeling of self-catalyzed III-V nanowire growth [J].

Glas, Frank ;

Ramdani, Mohammed Reda ;

Patriarche, Gilles ;

Harmand, Jean-Christophe .

PHYSICAL REVIEW B, 2013, 88 (19)

[14] LANGMUIR EVAPORATION FROM (100), (111A), AND (111B) FACES OF GAAS [J].

GOLDSTEIN, B ;

SZOSTAK, DJ ;

BAN, VS .

SURFACE SCIENCE, 1976, 57 (02) :733-740

[15] GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature [J].

Harmand, J. C. ;

Tchernycheva, M. ;

Patriarche, G. ;

Travers, L. ;

Glas, F. ;

Cirlin, G. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :853-856

[16]

Heiss M, 2013, NAT MATER, V12, P439, DOI [10.1038/NMAT3557, 10.1038/nmat3557]

[17]

Knyazeva M.V., 2013, P 14 INT C SEM MICR, P19

[18] Advances in the theory of III-V nanowire growth dynamics [J].

Krogstrup, Peter ;

Jorgensen, Henrik I. ;

Johnson, Erik ;

Madsen, Morten Hannibal ;

Sorensen, Claus B. ;

Fontcuberta i Morral, Anna ;

Aagesen, Martin ;

Nygard, Jesper ;

Glas, Frank .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (31)

[19] Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111) [J].

Le Thuy Thanh Giang ;

Bougerol, C. ;

Mariette, H. ;

Songmuang, R. .

JOURNAL OF CRYSTAL GROWTH, 2013, 364 :118-122

[20] Possibilities of Monte Carlo simulation for examination of nanowhisker growth [J].

Nastovjak, Alla G. ;

Neizvestny, Igor G. ;

Shwartz, Nataliya L. .

PURE AND APPLIED CHEMISTRY, 2010, 82 (11) :2017-2025

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