On the metal-insulator transitions in VO2 and Ti2O3 from a unified viewpoint

被引:35
|
作者
Tanaka, A [1 ]
机构
[1] Hiroshima Univ, Dept Quantum Matter, ADSM, Higashihiroshima, Hiroshima 7398530, Japan
关键词
VO2; Ti2O3; metal-insulator transition; Mott insulator; exchange interaction; lattice distortion; linear dichroism; 2p XAS;
D O I
10.1143/JPSJ.73.152
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The metal-insulator (M-I) transitions in VO2 and Ti2O3 were investigated using the three-band Hubbard model in connection with the on-site exchange interaction and lattice distortions. Although these two compounds have different crystal structures, the mechanism of the phase transitions can be understood from a unified viewpoint; an increase in energy level separation among the t(2g) orbitals caused by the lattice distortion triggers an abrupt change in the electron configuration in doubly occupied sites from an S = 1 Hund's coupling state to a low-spin S = 0 state with much larger energy and this strongly suppresses the charge fluctuation, resulting in localization of electrons. These M-I transitions are not induced by an increase in relative strength of the Coulomb interaction against the electron hopping as in the conventional scenario of the Mott-Hubbard transition but by the level splitting among the t(2g) orbitals against the on-site exchange interaction. Switching of the nearest-neighbor spin and orbital correlations and large change in the orbital occupation occur at the M-I transitions. Observation of the change in the orbital occupation at the M-I transitions by the linear dichroic V or Ti 2p x-ray absorption spectroscopy can be a crucial check to this theory.
引用
收藏
页码:152 / 162
页数:11
相关论文
共 50 条
  • [11] Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays*
    Zhou, Zhangyang
    Yang, Jia
    Liu, Yi
    Gao, Zhipeng
    Cao, Linhong
    Fang, Leiming
    He, Hongliang
    Xiong, Zhengwei
    CHINESE PHYSICS B, 2021, 30 (12)
  • [12] Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO2 Gate Insulator
    Yajima, Takeaki
    Nishimura, Tomonori
    Tanaka, Takahisa
    Uchida, Ken
    Toriumi, Akira
    ADVANCED ELECTRONIC MATERIALS, 2020, 6 (05)
  • [13] Phase Analysis of VO2 thin film and the Mechanism of the Electrically Triggered Metal-Insulator Transition of VO2
    Kim, Seong Hyun
    Kim, Bong-Jun
    Seo, Giwan
    Choi, Jeongyong
    Lee, Yong Wook
    Lim, Sang Chul
    NANOPHOTONIC MATERIALS XIV, 2017, 10344
  • [14] Metal-insulator alternating behavior in VO2/TiO2 supercells
    Cui, Yuanyuan
    Yang, Kebing
    Chen, Lanli
    Liu, Bin
    Yang, Guang
    Gao, Yanfeng
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 870
  • [15] Evolution of the d|| band across the metal-insulator transition in VO2
    Mossanek, RJO
    Abbate, M
    SOLID STATE COMMUNICATIONS, 2005, 135 (03) : 189 - 192
  • [16] Colossal Change in Capacitance of VO2 near the Metal-Insulator Transition
    Shimizu, Wataru
    Shinohara, Yuto
    Sugimoto, Wataru
    ELECTROCHEMISTRY, 2013, 81 (10) : 787 - 788
  • [17] Thermal Conductivity of VO2 Nanowires at Metal-Insulator Transition Temperature
    Li, Da
    Wang, Qilang
    Xu, Xiangfan
    NANOMATERIALS, 2021, 11 (09)
  • [18] Artificial afferent neurons based on the metal-insulator transition of VO2
    Chen, Jiayao
    Yin, Lei
    Wang, Yue
    Wang, Haolin
    Li, Dongke
    Yang, Deren
    Pi, Xiaodong
    SCIENCE CHINA-INFORMATION SCIENCES, 2024, 67 (11)
  • [19] Magnetoresistance across metal-insulator transition in VO2 micro crystals
    Singh, Davinder
    Yadav, C. S.
    Viswanath, B.
    MATERIALS LETTERS, 2017, 196 : 248 - 251
  • [20] Influence of Lattice Distortion on the Metal-Insulator Transition Temperature of VO2
    Lin T.
    Zhang Y.
    Cailiao Daobao/Materials Reports, 2020, 34 (03): : 06057 - 06061