Far Infrared Optical Properties of Bulk Wurtzite Zinc Oxide Semiconductor

被引:11
作者
Ooi, Pohkok [1 ]
Lee, Saicheong [1 ]
Ng, Shashiong [1 ]
Hassan, Zainuriah [1 ]
Abu Hassan, Haslan [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia
关键词
Zinc oxide; Far infrared; Polarization; Infrared reflectance; ZNO FILMS; PHONON MODES; REFLECTIVITY; SPECTROSCOPY; SAPPHIRE; CRYSTALS; NANORODS; GAP;
D O I
10.1016/S1005-0302(11)60092-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polarized far infrared (FIR) reflectance technique was applied to study the optical properties of a bulk wurtzite zinc oxide (ZnO) single crystal. Room temperature polarized FIR reflectance spectra were taken at various angles of incidence, from 20 degrees to 70 degrees. The theoretical polarized FIR reflectance spectra were simulated based on the anisotropic dielectric function model. Good agreement was achieved between the experimental and the theoretical FIR reflectance spectra. Through this work, a complete set of reststrahlen parameters of a bulk wurtzite ZnO at the Brillouin zone centre was obtained. Additionally, other FIR optical properties such as the real and the imaginary parts of the complex dielectric function, real and imaginary parts of the refractive index, the absorption coefficient and the reciprocal of the absorption coefficient were also obtained by using numerical calculation.
引用
收藏
页码:465 / 470
页数:6
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