Low-temperature MEMS process using plasma activated silicon-on-silicon (SOS) bonding

被引：0

作者：

Galchev, Tzeno ^{[1
]}

Welch, Warren C., III ^{[1
]}

Najafi, Khalil ^{[1
]}

机构：

[1] Univ Michigan, Ann Arbor, MI 48109 USA

来源：

PROCEEDINGS OF THE IEEE TWENTIETH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper explores the use of dielectric barrier discharge (DBD) surface activated low-temperature wafer bonding in MEMS device fabrication. Characterization of the DBD surface treatment process is included as well as analysis of the optimal bonding conditions. A new high aspect-ratio MEMS technology based on bonding two silicon wafers with an intermediate silicon dioxide layer at 400 degrees C is presented. This Silicon-On-Silicon (SOS) process requires three masks and provides several advantages compared with Silicon-on-Glass (SOG) and Silicon-on-Insulator (SOI) processes, including better dimensional and etch profile control of narrow and slender MEMS structures. This is demonstrated by fabricating a 5 mu m wide 30mm long beam. Additionally, by patterning the intermediate SiO2 insulation layer before bonding, footing is reduced without any extra processing, as compared to both SOG and SOI. All SOS process steps are CMOS compatible.

引用

页码：402 / 405

页数：4

共 8 条

[1]

BELOV N, 2002, 52 EL COMP TECHN C S

[2]

BENOIT O, 2006, MICROSYSTEM TECHNO V, V12, P383

[3] A hybrid Silicon-On-Glass (SOG) lateral micro-accelerometer with CMOS readout circuitry [J].