Improving GaN-on-silicon properties for GaN device epitaxy

被引：60
作者：
Dadgar, A. [1 ]
Hempel, T. [1 ]
Blaesing, J. [1 ]
Schulz, O. [2 ]
Fritze, S. [1 ]
Christen, J. [1 ]
Krost, A. [1 ]
机构：
[1] Univ Magdeburg, Inst Expt Phys, Fak Nat Wissensch, Univ Pl 2, D-39106 Magdeburg, Germany
[2] AZZURRO Semicond AG, D-39106 Magdeburg, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 | 2011年 / 8卷 / 05期
关键词：
GaN-on-Si; LED; HV-FET; MOVPE; VAPOR-PHASE EPITAXY; INCLINED THREADING DISLOCATIONS; ALGAN/ALN INTERMEDIATE LAYER; TEMPERATURE ALN INTERLAYERS; MOLECULAR-BEAM EPITAXY; HIGH-QUALITY GAN; CRACK-FREE GAN; SI SUBSTRATE; STRESS-RELAXATION; MISMATCHED LAYERS;
D O I：
10.1002/pssc.201001137
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN growth on silicon has recently found its way into products as transistor devices for high frequencies and high-voltage applications as well as for light emitting diodes (LEDs). Here, we present the importance of high quality GaN layers for growing LED structures and high-voltage transistors on silicon. The major difference is that LED growth on silicon substrates suffers from edge type dislocations during silicon doping while FETs suffer from a lowered breakdown field. We will show that the latter is most likely originating in screw type dislocations. By optimizing GaN material quality the breakdown field strength can be doubled from less than 0.7x10(6) V/cm up to similar to 1.5x10(6) V/cm. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1503 / 1508
页数：6
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