Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect

被引：23
作者：
Lee, M. H. [1 ]
Chang, S. T. [2 ]
Wu, T. -H. [1 ]
Tseng, W. -N. [1 ]
机构：
[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期
关键词：
Effective mass; subthreshold swing; tunneling;
D O I：
10.1109/LED.2011.2163379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of x2.9 BTBT in the < 112 > direction, as compared with Si < 110 > / (100) due to a small band gap. In addition, the high ON/OFF current ratio, with an ON current similar to 1 mu A/mu m and an OFF current similar to 10 pA/mu m, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.
引用
收藏
页码：1355 / 1357
页数：3
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